| PART |
Description |
Maker |
| GS88018BT-133 GS88018BT-133I GS88018BT-150 GS88018 |
133MHz 8.5ns 512K x 18 9Mb sync burst SRAM
150MHz 7.5ns 512K x 18 9Mb sync burst SRAM
166MHz 7ns 512K x 18 9Mb sync burst SRAM
200MHz 6.5ns 512K x 18 9Mb sync burst SRAM
225MHz 6ns 512K x 18 9Mb sync burst SRAM
250MHz 5.5ns 512K x 18 9Mb sync burst SRAM
|
GSI Technology
|
| GS832218B-133 GS832218B-133I GS832218B-150 GS83221 |
64K 3.3 VOLT SERIAL CONFIGURATION PROM 200万1800万36，为512k × 72分配36MB的S /双氰胺同步突发静态存储器
GIGABASE 350 CAT5E PATCH 1 FT, SNAGLESS, WHITE 200万1800万36，为512k × 72分配36MB的S /双氰胺同步突发静态存储器
2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs 200万18100万36，为512k × 72分配36MB的S /双氰胺同步突发静态存储器
2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs 200万1800万36，为512k × 72分配36MB的S /双氰胺同步突发静态存储器
2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs 200万1800万36，为512k × 72分配36MBS /双氰胺同步突发静态存储器
DIODE, ZENER, 4.3V, 0.5W, 5%, -65-175C, DO-35
(GS832218 / GS832236 / GS832272) S/DCD Sync Burst SRAMs
|
ETC
Electronic Theatre Controls, Inc.
List of Unclassifed Manufacturers
List of Unclassifed Man...
|
| GS88019AT-133 GS88019AT-133I GS88019AT-150I GS8801 |
512K X 18 CACHE SRAM, 3.5 ns, PQFP100
250MHz 512K x 18 9Mb sync burst SRAM
225MHz 512K x 18 9Mb sync burst SRAM
200MHz 512K x 18 9Mb sync burst SRAM
166MHz 512K x 18 9Mb sync burst SRAM
150MHz 512K x 18 9Mb sync burst SRAM
133MHz 512K x 18 9Mb sync burst SRAM
150MHz 256K x 32 9Mb sync burst SRAM
166MHz 256K x 32 9Mb sync burst SRAM
225MHz 256K x 32 9Mb sync burst SRAM
250MHz 256K x 32 9Mb sync burst SRAM
133MHz 256K x 36 9Mb sync burst SRAM
150MHz 256K x 36 9Mb sync burst SRAM
166MHz 256K x 36 9Mb sync burst SRAM
200MHz 256K x 36 9Mb sync burst SRAM
225MHz 256K x 36 9Mb sync burst SRAM
133MHz 256K x 32 9Mb sync burst SRAM
200MHz 256K x 32 9Mb sync burst SRAM
250MHz 256K x 36 9Mb sync burst SRAM
|
GSI Technology
|
| GS8320E36T-250 GS8320E36T-150 GS8320E36T-150I GS83 |
2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs
|
GSI Technology
http://
|
| GS8321E18E-166V GS8321E18E-133IV GS8321E18E-133V G |
2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs
|
GSI[GSI Technology]
|
| GS832118E-150I GS832118E-200 GS832118E GS832118E-1 |
2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs
|
GSI[GSI Technology]
|
| GS8320EV18GT-225 GS8320EV18GT-133 GS8320EV18GT-133 |
2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs
|
GSI[GSI Technology]
|
| GS832018GT-133V GS832018GT-133IV GS832036GT-133V G |
2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs 2M X 18 CACHE SRAM, 8.5 ns, PQFP100
2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs 1M X 36 CACHE SRAM, 8.5 ns, PQFP100
2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs 2M X 18 CACHE SRAM, 8 ns, PQFP100
2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs 2M X 18 CACHE SRAM, 7 ns, PQFP100
2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs 1M X 32 CACHE SRAM, 8.5 ns, PQFP100
2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs 1M X 36 CACHE SRAM, 8 ns, PQFP100
2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs 1M X 32 CACHE SRAM, 8 ns, PQFP100
2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs 1M X 36 CACHE SRAM, 6.5 ns, PQFP100
|
GSI Technology, Inc.
|
| GS8321V36E-250I GS8321V32GE-133 |
2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs
2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs
|
GSI Technology
|
| GS832018 GS832018T-133 GS832018T-133I GS832018T-15 |
36Mb Burst SRAMs
2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs
|
ETC
GSI[GSI Technology]
|
| GS84032AB-100 GS84032AB-100I GS84032AB-150 GS84032 |
100MHz 12ns 128K x 32 4Mb sync burst SRAM
150MHz 10ns 128K x 32 4Mb sync burst SRAM
166MHz 8.5ns 128K x 32 4Mb sync burst SRAM
|
GSI Technology
|
| BA7078AF1 BA7078AS BA7078AF BA7078AF-E2 |
Silicon Monolithic Integrated Circuit
Sync.Seperator/Sync. Detector IC for Multi-Sync. Monitor
|
ROHM[Rohm]
|
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